| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-5442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-14181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-5446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-5448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2012-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b0e9b1303c5345b5341aef14d8a6dce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59b6089e20258b5d3155837027d3322f |
| publicationDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014041879-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
In forming a semiconductor device having a TSV (silicon through electrode) and a through structure having a cross-sectional area larger than TSV, a notch is formed in the silicon through structure having a cross-sectional area larger than TSV when processing a through hole. Disclosed are a structure and a method for manufacturing the same for suppressing the occurrence and preventing leakage of metal. SOLUTION: First and second through holes 16 and 17 penetrating from a back surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) on which an element portion Ra is formed to the element formation surface 10b are provided. ing. An outer peripheral insulating film 12 is formed on the bottom side wall of the second through hole 17 so as to surround the outer periphery of the second through hole 17 having a large opening diameter among these through holes. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210118882-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018206871-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102554692-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355421-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023276125-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017037894-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017018216-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7029778-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710679-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721609-B2 |
| priorityDate |
2012-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |