| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013534370-A |
| titleOfInvention |
Semiconductor structure and method for providing a conductive material in an opening |
| abstract |
Some embodiments include a method for depositing a copper-containing material using physical vapor deposition of the copper-containing material while maintaining the temperature of the deposited copper-containing material at a temperature greater than 100 ° C. Some embodiments include a method in which the openings are lined with a metal-containing composition, wherein the copper-containing material is physically on the metal-containing composition while the temperature of the copper-containing material is below about 0 ° C. The copper-containing material is then annealed while the temperature of the copper-containing material is in the range of about 180 ° C to about 250 ° C. Some embodiments include a method wherein the opening is lined with a composition comprising a metal and nitrogen, and the lined opening is at least partially filled with a copper-containing material. Some embodiments include a semiconductor structure having a metal nitride liner along the perimeter of the opening sidewall and having a copper-containing material in the opening directly opposite the metal nitride liner. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017212466-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015159183-A |
| priorityDate |
2010-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |