| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013513948-A |
| titleOfInvention |
Method for stripping photoresist while keeping damage to low-k dielectrics low |
| abstract |
An improved method for stripping photoresist from dielectric material to remove etch-related residues. A method according to one aspect of the invention includes removing material from a dielectric layer using a hydrogen-based etching process that utilizes a weak oxidant and a fluorine-containing compound. The temperature of the substrate is maintained at about 160 degrees Celsius or less, for example, less than about 90 degrees Celsius. [Selection] Figure 3B |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150077157-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102230529-B1 |
| priorityDate |
2009-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |