| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_213773bc41a5a5784ada3c2acc14425f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44729786b2340b5c49aff65f40a0571a |
| publicationDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013239729-A |
| titleOfInvention |
Ultra-high aspect ratio dielectric pulse etching |
| abstract |
A method is provided for selectively etching a dielectric with ultra high aspect ratio features through a carbon-based mask. A method for selectively etching an ultra-high aspect ratio feature dielectric 408 through a carbon-based mask 412 in an etch chamber, wherein a flow of an etch gas comprising a fluorocarbon-containing molecule and an oxygen-containing molecule comprises: Supplied to the etching chamber. A pulse bias RF signal is provided. An excitation RF signal is provided to convert the etching gas into plasma. [Selection] Figure 4B |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022220224-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019102483-A |
| priorityDate |
2007-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |