abstract |
An etching method and a plasma etching apparatus based on the ALE method, which can reduce damage to a substrate to be processed and are excellent in etching amount controllability. A method for etching a substrate to be processed includes (a1) a step S1 for supplying an etchant gas into a processing vessel containing the substrate to be processed, (b1) a step S2 for exhausting the inside of the processing vessel, and (c1). ) Including a step S3 of supplying a rare gas into the processing container; and (d1) a step S4 of supplying a microwave into the processing container to excite the rare gas plasma in the processing container. A series of steps including a step of supplying an etchant gas, a step of exhausting, a step of supplying a rare gas, and a step of exciting a plasma of the rare gas may be repeated. [Selection] Figure 3 |