http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013165262-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bed7833eec23cbde724d2ceaf45998a5 |
| publicationDate | 2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013165262-A |
| titleOfInvention | Method for manufacturing optical semiconductor element |
| abstract | An optical semiconductor device manufacturing method including a step of dry etching a semiconductor stack containing arsenic in the uppermost layer to form a semiconductor mesa, and capable of suppressing a decrease in yield during manufacturing. provide. A method of manufacturing an optical semiconductor device according to the present invention includes a step S1 of forming a semiconductor stack 11 on a semiconductor substrate 1 and a surface 9S of a contact layer 9 so as to cover a part of the surface 9S of the contact layer 9. Step S3 for forming the mask layer 15 on the surface, S5 for exposing the surface 9S of the contact layer 9 of the semiconductor stack 11 to an oxygen-containing atmosphere, Step S7a for heating the semiconductor stack 11, and the semiconductor stack 11 using the mask layer 15 And a step S9 of forming a semiconductor mesa M in the semiconductor multilayer 11 by etching the substrate by dry etching. The contact layer 9 of the semiconductor stack 11 contains arsenic, and the semiconductor stack 11 is heated to a temperature of 250 ° C. or higher in the heating step S7a. [Selection] Figure 8 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020068310-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812843-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7044030-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017050316-A |
| priorityDate | 2012-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.