http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013153133-A

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filingDate 2012-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9b7eb9e09e59188e84a5639906ec70c
publicationDate 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013153133-A
titleOfInvention Semiconductor device
abstract PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing the characteristics of a transistor provided in each pillar even in a structure in which a plurality of vertical transistors are connected. A semiconductor device according to the present invention is provided so as to rise from a silicon substrate, and includes a plurality of vertical transistors having pillar lower diffusion layers at an end of the silicon substrate and a silicon substrate. Provided with a metal contact plug 31 connected to the pillar lower diffusion layer 9 of the plurality of vertical transistors 50, and the plurality of vertical transistors 50 are equally arranged around the metal contact plug 31. 31 is shared. [Selection] Figure 1
priorityDate 2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.