| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-48721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate |
2012-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8ac25d928ff0d4fe424f7eac4ad74bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d741173cbd530d223b6db3820039501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52ac8850d90b89fd5b368b8c7e8d850f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c50c8611dc38dcf09afc330385ca233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61d226352478270cff14b9b5ba06905d |
| publicationDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013148425-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
An object of the present invention is to improve the detection accuracy of a semiconductor device for detecting various substances including biological substances such as DNA. The semiconductor device includes a channel region CH disposed on a first surface of a silicon oxide film 110, source and drain regions disposed on both sides of the channel region CH, and a channel on the first surface. A gate electrode G that is disposed apart from the region CH and is disposed to face the side surface xz1 of the channel region CH, an insulating film Z positioned between the channel region CH and the gate electrode G, and the channel region CH A pore P is disposed along the side surface xz1 so as to intersect the first surface. A test object such as DNA 200 is introduced into the pore P, and a change in electric field due to the test object with respect to the inversion layer 10 formed on the side surface xz1 of the channel region CH is detected as a change in current flowing between the source and drain regions. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10261067-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9945836-B2 |
| priorityDate |
2012-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |