http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005303052-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a49e400c5488291bd9230d095c04cfef |
| publicationDate | 2005-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005303052-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | In a semiconductor device using substantially single crystal grains of a semiconductor material for a channel formation region, a semiconductor device manufacturing method capable of obtaining a semiconductor device having an excellent S value, which is an electrical characteristic of a subthreshold region, is provided. To do. A substrate film is formed on a substrate, a grain filter serving as a starting point for crystallization of the semiconductor film is formed, and a semiconductor film is formed. Then, laser annealing is performed to crystallize the semiconductor film to form substantially single crystal grains 15a. Thereafter, the semiconductor film 15 is thinned to a desired film thickness by a method such as thermal oxidation. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013108480-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013148425-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921902-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014042051-A |
| priorityDate | 2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.