| abstract |
An apparatus and a method capable of suppressing problems such as interdiffusion and intermixing of Cu and Sn in an interconnect structure of a die package. An integrated circuit (IC) die, a package substrate having a first side facing the surface of the IC die and a second side opposite to the IC die, and a metal comprising aluminum disposed on the IC die A pad, a base metal layer including titanium disposed on the metal pad, a bump including copper disposed on the base metal layer, and a solder cap including tin disposed on the bump. And a solder layer comprising tin disposed on the first side of the package substrate, wherein the solder cap on the bump and the solder layer on the substrate are bonded together An assembly for electrically connecting the IC die and the substrate. [Selection] Figure 2 |