http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013138210-A

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publicationDate 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013138210-A
titleOfInvention Method for low temperature thermal cleaning
abstract A method and apparatus for removing unwanted materials from a surface in a semiconductor manufacturing process chamber. A gas mixture comprising a fluorine source and an oxygen source is pretreated to contain active fluorine species. The pretreated mixture 106 is stored in the gas storage device 107 for the time being and then introduced into the semiconductor process chamber 100. Prior to the introduction of the pretreated gas, the temperature in the chamber 100 is lowered to a temperature below the normal operating temperature. Undesired material is removed or removed by chemical reaction with the pretreated gas mixture without generating a plasma or generating high temperature conditions in the chamber 100. [Selection] Figure 1
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