| abstract |
A method of stably generating cleaning plasma irrespective of the conditions of CO-containing plasma is provided. A magnetic film formed on a to-be-etched wafer 802 is converted into plasma by applying source power to a CO-containing gas containing C and O elements introduced into a vacuum vessel 801, and When processing using the generated CO-containing plasma, a predetermined processing is performed on the magnetic film formed on the etched wafer 802 with the CO-containing plasma, and then a cleaning gas is introduced while the source power 806 is applied. Thereafter, the introduction of the CO-containing gas is stopped, thereby generating cleaning plasma using a predetermined cleaning gas. [Selection] Figure 1 |