http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013038388-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2012-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce9e601bcb68764fb30cccc9e9f3dab0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b952de82bb91216b1197e0b4eb33a44 |
| publicationDate | 2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013038388-A |
| titleOfInvention | Manufacturing method of semiconductor substrate |
| abstract | A method of manufacturing a semiconductor substrate, in which a trench can be filled with an epitaxial film having high crystallinity and is particularly suitable for forming a pn column. A trench forming step for forming a trench T1 in a semiconductor substrate 10a by dry etching, a chemical dry etching (CDE) performed at a low temperature of 120 ° C. or less, or a surface layer portion of the trench T1 by wet etching is performed to form a first A first damaged layer removing step for removing the damaged layer D1, and a heat treatment of the semiconductor substrate 10a in a non-oxidizing and non-nitriding atmosphere at a high temperature of 1050 ° C. or higher to provide a first layer existing below the first damaged layer D1. A semiconductor substrate 10 having a second damage layer recovery step for recovering the crystallinity of the two damage layer D2 and a trench embedding step of forming the epitaxial film 3 in the trench T1 and filling the trench T1 with the epitaxial film 3. The manufacturing method is as follows. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102481166-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170051692-A |
| priorityDate | 2011-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.