http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013030667-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac8ea4f652c51209833279712f81831b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2011-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47addd01267203c5b8b285907eb74da2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b12a67c603a7a229917b83a6324d67c |
| publicationDate | 2013-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013030667-A |
| titleOfInvention | Nitride semiconductor device and manufacturing method thereof |
| abstract | A normally-off type nitride semiconductor device capable of suppressing an increase in on-resistance and further reducing a gate leakage current and a drain leakage current in an off state and a manufacturing method thereof. The upper nitride semiconductor layer 15 is made of a material larger than the lattice constant of the lower nitride semiconductor layer 14, and the upper nitride semiconductor layer surface 15 between the gate electrode, the source electrode and the drain electrode is replaced with nitrogen. Plasma treatment of gas is performed. By performing the plasma treatment, the two-dimensional electron gas layer 16 having a carrier concentration higher than the carrier concentration of the two-dimensional electron gas layer formed by the laminated structure of the nitride semiconductor layer without the plasma treatment is formed, and the characteristics are excellent. A normally-off type nitride semiconductor device is obtained. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017526015-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014225606-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105204190-A |
| priorityDate | 2011-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.