| abstract |
To provide a plasma CVD method of silicon carbonitride and silicon carbonitride thin film with enhanced internal compression pressure. The present invention relates to a method for enhancing internal compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, which are derived from amino-vinylsilane-based precursors. Said method comprising depositing a film. More specifically, the present invention provides the following formula: [RR 1 N] x SiR 3 y (R 2 ) z {Wherein, be x + y + z = 4, x = 1~3, y = 0~2, and z = 1~3; R, R 1 , and R 3 is hydrogen, C 1 -C 10 alkane, alkene, Can be C 4 to C 12 aromatic; each R 2 is a vinyl, allyl, or vinyl-containing functional group. Amino vinylsilane based precursors selected from: [Selection figure] None |