| abstract |
The present invention provides a plasma processing method capable of suppressing foreign matters due to an increase in the number of processed objects in a plasma process using a deposition gas. In the present invention, plasma is generated from a deposition gas introduced into a processing chamber, and an object to be processed placed on a sample stage provided in the processing chamber is applied with high-frequency power. In the plasma processing method for etching the object to be processed by being exposed to the plasma, a first period in which the object to be processed is exposed to the plasma, and a period in which the object to be processed is exposed to the plasma than in the first period. By repeating the second period with a low etching rate for the object to be processed, the object to be processed is etched under an etching condition in which the deposited film on the wall surface of the processing chamber becomes amorphous. [Selection] Figure 2 |