| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2011-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12a8dc53697a9aa533b75f401ecb5452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eedb4ca9356d645c04e758a133837996
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ef58a1bb9ec60924e5ac12d9a312802 |
| publicationDate |
2013-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013012614-A |
| titleOfInvention |
Etching method and silicon etchant used therefor |
| abstract |
An etching method for removing at least part of a film by applying a silicon etching solution containing at least an inorganic alkali compound, a hydroxylamine compound, and an anionic compound to a polycrystalline silicon film or an amorphous silicon film. A silicon etching solution that etches in a well-balanced manner from the center to the end of a wafer in forming irregularities on a semiconductor substrate by accurately and efficiently removing an amorphous silicon or polycrystalline silicon film, and the same An etching method is provided. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013055087-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102483009-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053083-A |
| priorityDate |
2011-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |