| abstract |
A silsesquioxane resin is applied over the patterned photoresist and cured to produce a cured silsesquioxane resin on the pattern surface. Thereafter, using a reactive ion etching recipe containing CF 4 , the silicon resin is “etched back” to the top surface of the photoresist material to expose the entire top surface of the organic photoresist. Thereafter, the organic photoresist is removed by etching using a second reactive ion etching recipe containing O 2 . As a result, a silicon resin film having via holes of the size and shape of the posts patterned in the photoresist is obtained. Optionally, the new pattern can be transferred to the lower layer. |