| abstract |
A method for producing a silicon-containing thin film by thermal polymerization of a reaction gas mixture of bisaminosilacyclobutane and a source gas selected from a nitrogen supply gas, an oxygen supply gas, and a mixture thereof. The deposited film may be silicon nitride, silicon carbonitride, silicon dioxide or carbon-doped silicon dioxide. These films are useful as dielectrics, passivation films, barrier films, spacers, liners and / or stressors in semiconductor devices. |