| abstract |
A manufacturing yield of a semiconductor device is improved by improving a bonding defect of a bump electrode. In a semiconductor device in which a plurality of bonding pads formed on a surface of a semiconductor chip and a plurality of leads are connected via a plurality of bump electrodes, the top surfaces of the plurality of leads are flattened. Semi-glossy surface having a roughness in the range (0 μm <maximum height (Ry) ≦ 20 μm), not the surface (maximum height (Ry) = 0) but the maximum height (Ry) larger than 0 μm and 20 μm or less. The surface of [Selection] Figure 4 |