| abstract |
To provide a sputtering target of an In—Ga—Zn-based oxide with less occurrence of abnormal discharge and nodules. SOLUTION: 2θ = 7.0 ° to 8.4 °, 30.6 ° to 32.0 °, 33.8 ° to 35.8 °, 53.5 ° to 56.5 °, 56.5 °. -59.5 °, 14.8 ° -16.2 °, 22.3 ° -24.3 °, 32.2 ° -34.2 °, 43.1 ° -46.1 °, 46.2 ° sputtering target containing an oxide a, and InGaZnO 4 having a diffraction peak in the region A~K of ～49.2 ° and 62.7 ° ~66.7 °. [Selection] Figure 1 |