http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227336-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
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filingDate 2011-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_019630045675fe88ee96375c2b09fe60
publicationDate 2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012227336-A
titleOfInvention Insulating film manufacturing method
abstract A method of manufacturing an insulating film having a high mass density is proposed. An insulating film manufacturing method includes a step of forming an insulating film on a substrate and a step of processing the insulating film. The insulating film contains Si and O, and is, for example, a SiO 2 film. In the second step, the temperature of the insulating film is set to be 551 ° C. or higher and 574 ° C. or lower, and an active rare gas and active oxygen are supplied to the insulating film. [Selection] Figure 1
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Total number of triples: 46.