| abstract |
A method of manufacturing an electronic device material such as a high-quality MOS semiconductor having an insulating layer or a semiconductor layer having excellent electrical characteristics. A process of forming an insulating film by performing a CVD process on a substrate to be processed whose main component is single crystal silicon, and the substrate to be processed through a planar antenna member (SPA) having a plurality of slots. Exposing the plasma generated by irradiating the processing gas with microwaves and modifying the insulating film using the plasma. [Selection] Figure 6 |