| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2012-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d57e6054a935130e0623181c152eed97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54b442cfb4829cc55a5f4a4813705250
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b03343c022bbfae31f0985f6f09737c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2b6ada098c577a21c1e29c7663d9007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89024707ac582296a48232f8196f3628 |
| publicationDate |
2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012195569-A |
| titleOfInvention |
Semiconductor device manufacturing method and computer recording medium |
| abstract |
A method of manufacturing a semiconductor device and a computer recording medium capable of efficiently forming a stepped structure having a multi-stage shape are provided. A multilayer film in which a first film having a first dielectric constant and a second film having a second dielectric constant different from the first dielectric constant are alternately stacked, and an upper layer of the multilayer film A method of manufacturing a semiconductor device in which a substrate having a photoresist layer positioned and functioning as an etching mask is etched to form a stepped structure, wherein the first film is plasma etched using the photoresist layer as a mask. One step, a second step of exposing the photoresist layer to a hydrogen-containing plasma, a third step of trimming the photoresist layer, a photoresist layer trimmed by the third step, and a first film plasma-etched in the first step And a fourth step of etching the second film using the mask as a mask, and the multilayer film is formed into a stepped structure by repeating the first to fourth steps. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179598-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019121750-A |
| priorityDate |
2011-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |