http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012191128-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d37d79c1a68354cc81399a4b67b540df |
| publicationDate | 2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012191128-A |
| titleOfInvention | Etching method, etching apparatus, and computer-readable storage medium |
| abstract | PROBLEM TO BE SOLVED: To etch a silicon film in a multilayer structure using a resist film or an organic film as a mask, and to oxidize a silicon film and a silicon oxide existing under the silicon film. To provide an etching method capable of etching a material film all at once. An etching method for etching a multilayer structure including a silicon oxide film 2 and a silicon film 3 formed on the silicon oxide film 2, the silicon film 3 and the silicon oxide in the multilayer structure. When the physical film 2 is etched, the silicon film 3 and the silicon oxide film in the multilayer structure are formed by using the resist film 6 or the organic film as an etching mask and using an etching gas containing CH 2 F 2 gas as an etching gas. Etch 2 together. [Selection] Figure 2 |
| priorityDate | 2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.