http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012174850-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2011-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_124605f184cacf24d1ec01748a229026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4adde77e253e0ec0c3499ce742e5cf29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e440d5ba037a6e1fe0ac2de36fc078e0 |
publicationDate | 2012-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012174850-A |
titleOfInvention | Substrate processing method and storage medium |
abstract | There is provided a substrate processing method capable of forming a hole or the like having a high aspect ratio in a silicon layer without reducing an etching rate. A polysilicon layer on a wafer is etched with bromine cations and bromine radicals in a plasma generated from a processing gas containing hydrogen bromide gas, oxygen gas and nitrogen trifluoride gas, The silicon bromide-based deposit 44 generated during the etching is oxidized with oxygen radicals 46 and nitrogen radicals 47 in plasma generated from a processing gas containing oxygen gas and nitrogen gas, and transformed into silicon oxide, The etching rate of the hole 43 is prevented from being lowered by continuously etching the silicon oxide with the fluorine cation 48a or the fluorine radical 48b in the plasma generated from the processing gas containing argon gas and nitrogen trifluoride gas. [Selection] Figure 3 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108231555-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108231555-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018098359-A |
priorityDate | 2011-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.