| abstract |
A highly efficient light emitting device manufacturing method using a sialon-based phosphor is provided. According to an embodiment, a light emitting element is mounted on a surface of a substrate, and a mask having an opening in which a region where the light emitting element is mounted is placed on the substrate, and the following general formula (1) ), A resin containing a plate-like particle and a phosphor containing an average particle size of 12 μm or more, and a resin other than the resin filling the opening is removed from the mask surface using a squeegee. This is a method for manufacturing a light-emitting device in which heat treatment is performed to remove, remove the mask from the substrate, and cure the resin. (M 1-x1 Eu x1 ) 3-y Si 13-z Al 3 + z O 2 + u N 21-w (1) (In the general formula (1), M is an element selected from a group IA element, a group IIA element, a group IIIA element, a group IIIB element excluding Al, a rare earth element, and a group IVB element. X1, y, z , U, w satisfy the following relationship: 0 <x1 <1, −0.1 <y ≦ 0.3, −3 <z ≦ 1, −3 <u−w ≦ 1.5) [Selection] Figure 1 |