| abstract |
When ICP-RIE using a chlorine-based gas is used for dry etching of a gallium nitride based semiconductor, since the temperature of the dielectric coupled plasma is high, the etched surface is uneven and damages the semiconductor. Chlorine remains. A first semiconductor layer forming step for forming a first semiconductor layer made of a gallium nitride based semiconductor, and a part of the first semiconductor layer is dry-etched by a microwave plasma process using a bromine-based gas. And a recess forming step for forming the recess, and a method for manufacturing a semiconductor device for manufacturing a gallium nitride based semiconductor device is provided. [Selection] Figure 1 |