| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45591
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 |
| filingDate |
2012-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a01770819b3294fe9bed3593ec41d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b1e2dc8e2ca163e5e4fea4aab1953c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b42b480e00ab91f9c832f1a601d0da50 |
| publicationDate |
2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012151482-A |
| titleOfInvention |
Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber |
| abstract |
[PROBLEMS] To improve plasma density and etching uniformity. In order to form an air gap, the flow conductance of plasma formed in a plasma processing apparatus including an upper electrode on the opposite side of the lower electrode is controlled. The lower electrode 104 is configured to support the substrate and is coupled to the RF power source 110. The process gas injected into the gap is excited into a plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a slot set therein, and a mechanism 108 for controlling gas flow through the slot. [Selection] Figure 1 |
| priorityDate |
2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |