http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012119699-A

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filingDate 2012-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012119699-A
titleOfInvention Plasma processing method, storage medium, and plasma processing apparatus
abstract A plasma processing method capable of improving etching controllability of a high dielectric constant insulating film is provided. When an etching process is performed on a hafnium oxide film formed on a semiconductor device on a wafer W, the wafer W is loaded into a chamber 11 of a plasma processing apparatus 10 and C 4 is placed in a processing space S in the chamber 11. F 8 gas, carbon monoxide gas, argon gas, and xenon gas are supplied at a predetermined flow ratio, plasma is generated from the supplied processing gas by applying high frequency power to the processing space S, and C 4 F 8 is generated by xenon. The high dielectric constant insulating film is etched at a high etch rate by further promoting the dissociation of fluorine from the substrate. [Selection] Figure 1
priorityDate 2005-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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