http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012102404-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
filingDate | 2011-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e79784ebffb488222d7a46c9562a9db6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62cb9ae00a93a728fced02b525262011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f960033bddd540fbc4d51858c53eef7 |
publicationDate | 2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012102404-A |
titleOfInvention | Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus |
abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus capable of solving a surface morphology deterioration due to a base dependency of a film containing Ni and forming a continuous film in a thin film region. The process includes accommodating a substrate in a processing container, supplying a raw material containing nickel and impurities in the processing container, and supplying an inert gas in the processing container as one cycle. Forming a film containing nickel with a predetermined thickness on the substrate by performing the cycle a predetermined number of times. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014043604-A |
priorityDate | 2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.