http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012102404-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
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filingDate 2011-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e79784ebffb488222d7a46c9562a9db6
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publicationDate 2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012102404-A
titleOfInvention Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
abstract PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus capable of solving a surface morphology deterioration due to a base dependency of a film containing Ni and forming a continuous film in a thin film region. The process includes accommodating a substrate in a processing container, supplying a raw material containing nickel and impurities in the processing container, and supplying an inert gas in the processing container as one cycle. Forming a film containing nickel with a predetermined thickness on the substrate by performing the cycle a predetermined number of times. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014043604-A
priorityDate 2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.