| abstract |
The present invention provides a plasma etching processing apparatus capable of etching into a desired shape more accurately. A plasma etching processing apparatus includes a processing container for performing plasma processing on a substrate to be processed, a gas supply unit for supplying a gas for plasma processing into the processing container, and a processing container. And a support base 14 that supports the substrate W to be processed, a microwave generator 15 that generates a microwave for plasma excitation, and a microwave generated by the microwave generator 15. Plasma generating means for generating plasma in the processing container 12, pressure adjusting means for adjusting the pressure in the processing container 12, bias power supplying means for supplying AC bias power to the support base 14, and bias power supplying means And control means for controlling the AC bias power so as to be alternately stopped and supplied. [Selection] Figure 1 |