http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012054377-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2010-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7611cdc52a37ece132d38228370b882b
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publicationDate 2012-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012054377-A
titleOfInvention Plasma CVD equipment
abstract Provided is a plasma CVD apparatus capable of generating plasma in a cathode recess (hollow) over a wide area in order to obtain a high-quality amorphous silicon thin film having a low defect and low high-order silane contamination in a large area. . A ground electrode 11 for placing a film formation substrate 13 in a vacuum vessel 2, a cathode 3 disposed at a distance of 2 to 500 mm from the ground electrode and connected to a high-frequency power source 15, A potential shield plate 8 disposed between the cathode and the ground electrode is provided, and the cathode has a facing surface 5 and a plurality of recesses 4 on the side facing the ground electrode. In the potential shield plate, through holes 9 having a projected area of 50 to 250% of a projected area on a plane parallel to the potential shield plate of each concave portion are formed at each position facing each concave portion of the cathode. Yes. The cathode and the potential shield plate are arranged so that the distance between the closest portions is 0.1 to 20 mm. [Selection] Figure 1
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Total number of triples: 25.