http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012037277-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01K7-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2010-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2fc9f6fba9662144da27cb7175888ec |
| publicationDate | 2012-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012037277-A |
| titleOfInvention | Temperature rising device and temperature rising test method |
| abstract | A temperature-raising device that is small and inexpensive, can be easily controlled, and can be applied to a temperature-raising test at a high temperature exceeding the temperature limit of a semiconductor device made of silicon, and the temperature-raising device The temperature rising test method used is provided. A power supply voltage is applied from an external DC power supply to a drain electrode of a MOSFET made of silicon carbide (SiC), and a variable bias voltage generated from the applied power supply voltage is applied to a gate electrode. As a result, the MOSFET 10 is heated. With respect to the voltage obtained by dividing the power supply voltage by the resistors R3 and R4, the change in the voltage obtained by dividing the power supply voltage by the resistors R1 and R2 is amplified by the MOSFET 20 with a predetermined negative amplification factor, and the drain electrode 21 Is added, the voltage of the drain electrode 21 becomes constant, and the bias voltage is kept constant. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113466649-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113466649-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113391180-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113391180-A |
| priorityDate | 2010-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.