http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011211162-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9daa4930d557a5931a817c98c505926d |
| publicationDate | 2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011211162-A |
| titleOfInvention | Manufacturing method of semiconductor element |
| abstract | A method of manufacturing a semiconductor element capable of easily processing shapes having different etching depths in the same plane while suppressing surface irregularities. A mask having a plurality of openings having different opening widths is formed on a semiconductor surface. For each opening having the same opening width, etching (methane / hydrogen plasma irradiation) is performed under the condition that the hydrogen plasma concentration at the mask edge becomes a predetermined concentration. By setting the plasma conditions (diffusion distance or pressure) and mask shape (opening width) so as to avoid regions of hydrogen plasma volume where etching and polymer formation that increase the roughness significantly on the surface occur simultaneously In addition, it is possible to process shapes having different etching depths in the same plane while suppressing surface irregularities. [Selection] Figure 13 |
| priorityDate | 2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.