| abstract |
Provided is a pattern forming method useful for forming a fine pattern. A step of applying a chemically amplified positive resist composition on a support to form a first resist pattern; and the first resist pattern on the support on which the first resist pattern is formed. Applying a pattern reversal composition containing an organic solvent that does not dissolve the resist pattern to form a pattern reversal film, and performing alkali development to remove the first resist pattern and form a pattern; The chemically amplified positive resist composition comprises an acid generator component (B) and a base component (A) having an acid dissociable, dissolution inhibiting group, and the pattern reversal composition comprises: The pattern reversal containing an acid component (H) capable of dissociating the acid dissociable, dissolution inhibiting group in the component (A) and a substrate component (A ″) having no acid dissociable, dissolution inhibiting group. Film for alkaline developer The pattern forming method dissolution rate is 0.3～3.5Nm / sec that. [Selection figure] None |