| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6649b81c3b891d150780c9651224fba5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cb1544882513e4f562a37e04728a566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373 |
| publicationDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011192664-A |
| titleOfInvention |
Plasma etching method and plasma etching apparatus |
| abstract |
When a line mask is formed by etching a laminated mask film including an inorganic film and an organic film, or when a plurality of types of line sections having different intervals between adjacent line sections are formed by etching the mask film. Furthermore, the present invention provides a plasma etching method and a plasma etching apparatus capable of independently controlling the distribution of the line width and height of the line portion in the plane of the wafer. In a plasma etching method in which plasma etching is performed on a substrate W by irradiating the substrate W with plasma containing charged particles and neutral particles, the temperature in the plane of the substrate W supported by a support portion 105 is solved. By adjusting the distribution, the distribution of the reaction amount in which the substrate W reacts with the neutral particles in the plane of the substrate W is controlled so that the substrate W supported by the support unit 105 faces the support unit 105. The distribution of the irradiation amount of the charged particles in the plane of the substrate W is controlled by adjusting the distance from the electrode 120 provided on the substrate W. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016009805-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150053926-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I587387-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014075567-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015115541-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318340-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013061593-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013157418-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014042192-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102147822-B1 |
| priorityDate |
2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |