| abstract |
A CMP polishing liquid capable of improving the polishing rate for a silicon oxide film as compared with a conventional polishing liquid and improving the in-plane uniformity of a substrate having a silicon oxide film on the surface, And the grinding | polishing method using the same is provided. A polishing slurry for CMP according to the present invention contains abrasive grains, a first additive, and water, contains a compound that satisfies a predetermined condition as a first additive, and has a surface tension. It is less than 68 dyn / cm at 25 ° C. The polishing method according to the present invention is a method for polishing a substrate having a silicon oxide film on the surface, and the polishing pad is used to supply the CMP polishing liquid between the silicon oxide film and the polishing pad, while the polishing pad pads the silicon oxide film. A step of polishing. [Selection figure] None |