| abstract |
A semiconductor device manufacturing method that suppresses consumption of a film thickness during slimming of a resist film. A method of manufacturing a semiconductor device includes a step of alternately laminating a plurality of insulating layers 25 and a plurality of conductive layers WL on a substrate 11 to form a laminate, and forming a resist film 50 on the laminate. A step of plasma etching the insulating layer 25 and the conductive layer WL using the resist film 50 as a mask, and a plasma treatment using a gas containing at least one of boron, phosphorus, and arsenic. The resist film 50 is formed by plasma treatment using a gas containing oxygen in a state in which the hardened layer 51 containing at least one of boron, phosphorus and arsenic is formed, and the hardened layer 51 is formed on the upper surface of the resist film 50 And slimming the planar size of. [Selection] Figure 5 |