| abstract |
A method for planarizing a surface of a semiconductor device using a slurry composition is provided. A secondary chemical mechanical polishing process is performed on the oxide layer 18b remaining on the nitride layer 14 until the surface of the nitride layer 14 is exposed, and the oxide layer is only in the trench region 16. Allow the layers to be filled. In the secondary chemical mechanical polishing step, the ceria slurry according to the present invention is used. [Selection] Figure 2 |