| abstract |
A polishing process capable of improving the polishing rate of a silicon oxide film and a silicon nitride film relative to the polishing rate of a polysilicon film, and polishing a silicon oxide film and a silicon nitride film using the polysilicon film as a stopper film. A CMP polishing liquid that can be applied to the above is provided. A CMP polishing liquid of the present invention is a CMP polishing liquid used by mixing a first liquid and a second liquid, and the first liquid is a cerium-based abrasive, a dispersant, and water. The second liquid contains a polyacrylic acid compound, a surfactant, a pH adjuster, a phosphoric acid compound, and water, and the pH of the second liquid is 6.5 or more, and the phosphoric acid compound The first liquid and the second liquid are mixed so that the content of is within a predetermined range. The CMP polishing liquid of the present invention contains a cerium-based abrasive, a dispersant, a polyacrylic acid compound, a surfactant, a pH adjuster, a phosphoric acid compound, and water, and a phosphoric acid compound. Is in a predetermined range. [Selection figure] None |