| abstract |
(57) Abstract: In a CPM technique for flattening an interlayer insulating film, a BPSG film, and an insulating film for isolating a shallow trench, a polishing agent capable of performing polishing efficiently, at high speed, and easily performing process control. And a polishing method. SOLUTION: Cerium oxide particles, dispersant, anionic, free -COOM group, phenolic -OH group,- SO 3 M group, -O ยท SO 3 H group, -PO 4 M 2 group or - Water-soluble organic small molecule having PO 3 M 2 group (M is H, NH 4 or a metal atom such as Na or K) and a CMP abrasive containing water. The CMP polishing slurry of the present invention is composed of a cerium oxide slurry containing cerium oxide particles, a dispersant, and water, and an additive solution containing an additive and water, and can improve storage stability. |