Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-4652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
filingDate |
2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd42f4fb77bb3b582418f78c50883018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd387bf696d3166b630a637a35eca73d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7ed47a7001166ee715a4cbe3285c8c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0dcecdb0e6b4a3e7dc366a15acb2fb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a298297c8dbd2ef250f3fd79d4143460 |
publicationDate |
2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2011119658-A |
titleOfInvention |
Plasma processing apparatus and plasma processing method |
abstract |
A plasma density distribution is freely and finely controlled using a simple correction coil in an inductively coupled plasma process. The inductively coupled plasma processing apparatus generates inductively coupled plasma in a donut shape under a dielectric window 52 close to an RF antenna 54, and disperses the donut shaped plasma in a wide processing space. Thus, the plasma density is averaged in the vicinity of the susceptor 12 (that is, on the semiconductor wafer W). In order to make the plasma density distribution in the vicinity of the susceptor 12 uniform in the radial direction, the RF magnetic field generated by the RF antenna 54 is electromagnetically corrected by the correction ring 70, and the switching mechanism according to the process conditions. 110 is used to vary the energization duty ratio of the correction coil 70. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101663214-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160066871-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102147200-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130140571-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140094461-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013258098-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101718182-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014158005-A |
priorityDate |
2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |