http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011086782-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48e7fcb815e3579b86109198cbc70ea4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0112 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2009-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2606c8680382b005363ebbe0e1686217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8495d985604ec913f202b9d483ec2f87 |
| publicationDate | 2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011086782-A |
| titleOfInvention | Manufacturing method of silicon structure, manufacturing apparatus thereof, and manufacturing program thereof |
| abstract | The present invention realizes advanced shape control of a silicon structure in which anisotropic etching and isotropic etching are combined. According to one aspect of the present invention, a method for manufacturing a silicon structure includes trench etching for silicon using plasma formed by introducing an etching gas and an organic deposit forming gas alternately or mixedly. Formed in the first step, the second step in which the silicon structure formed in the first step is exposed to the plasma formed by introducing the organic deposit forming gas, and the second step. A third step of exposing silicon at the bottom of the trench-etched portion of the silicon structure; a fourth step of exposing the silicon structure formed by the third step to xenon difluoride gas; And a fifth step of heating the silicon structure formed in the four steps at 50 ° C. or higher and 500 ° C. or lower in an oxygen-containing gas atmosphere. [Selection] Figure 7 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016103658-A |
| priorityDate | 2009-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.