| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0726efc17902544aceecb2fa3e6f271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c7a4901428d0c92efa76d0b9e575770 |
| publicationDate |
2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011071522-A |
| titleOfInvention |
DC / RF hybrid processing system |
| abstract |
PROBLEM TO BE SOLVED: At present, a fully-depleted silicon-on-insulator (FD SOI), which is a next generation SOI film, has not been manufactured due to a limitation in thickness control uniformity and defects. The present invention relates to at least one direct current (DC) / high frequency (RF) hybrid (DC / RFH) processing system and related direct current (DC) / high frequency (RF) hybrid (DC / RFH) procedures and DC / RF. An apparatus and method for processing substrates and / or wafers in real time can be provided by using RFH processing parameters and / or DC / RFH models. [Selection] Figure 35 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101354343-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9976105-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023042698-A1 |
| priorityDate |
2009-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |