| abstract |
An improved method and apparatus for ion assisted etching in a plasma processing system is disclosed. In accordance with various aspects of the present invention, a high position edge ring, a grooved edge ring, and a high frequency coupled edge ring are disclosed. The present invention serves to improve the etch rate uniformity across the substrate (wafer). The improved etch rate uniformity provided by the present invention not only increases manufacturing yield, but is also cost effective and does not pose a risk of particulate and / or heavy metal contamination. [Selection] Figure 3 |