| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f89cf3de44d48c2eb2654befcd951f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbf7f2561e66e4c479ede49c7b3d56f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_791dac8ea442c9e7921dcd0d52091eb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffa4a732672dd927e60534c6ed14fee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d64e959480527574d8965bbe2262bc39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 |
| publicationDate |
2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011008235-A |
| titleOfInvention |
Resist modifying composition and pattern forming method |
| abstract |
[MEANS FOR SOLVING PROBLEMS] (1) Forming a first resist film by applying a positive resist material containing a polymer compound having a repeating unit whose alkali solubility is increased by the action of an acid and a repeating unit containing a lactone structure to a substrate Exposing after heat treatment, and alkali developing after heat treatment to form a first resist pattern, 2) A step of applying a resist-modifying composition on the first resist pattern and performing a modification treatment by heating; 3) A composition for resist modification used in a pattern forming method including a step of applying a second positive resist material thereon, exposing after heat treatment, and performing alkali development after heat treatment to form a second resist pattern. And a base resin having a specific structure and an alcohol solvent. [Effect] The first pattern can be sufficiently inactivated and retained after the second patterning, and a double patterning process in which the substrate is processed by two exposures and one dry etching is possible. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102480056-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016080910-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016181628-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160045603-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011180385-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011053669-A |
| priorityDate |
2009-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |