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publicationNumber JP-2010525611-A
titleOfInvention Method for manufacturing trench type semiconductor device with thermally sensitive filling material
abstract A method of manufacturing a trench type semiconductor device having a thermally unstable filling material is provided. Disposable materials are used to fill the trenches, which are then replaced with thermally sensitive filling materials after a high temperature process is performed. A trench type semiconductor device manufactured according to the method embodiment is also provided.
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