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filingDate 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010514216-A
titleOfInvention Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber
abstract An apparatus is provided for controlling the flow conductance of a plasma formed in a plasma processing apparatus that includes an upper electrode opposite the lower electrode to form an air gap therebetween. The lower electrode is configured to support the substrate and is coupled to the RF power source. The process gas injected into the gap is excited into a plasma state during operation. The apparatus includes a ground ring concentrically surrounding the lower electrode and having a slot set therein, and a mechanism for controlling gas flow through the slot. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017501569-A
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Total number of triples: 33.