http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010514166-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
filingDate | 2007-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2010-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2010514166-A |
titleOfInvention | Safe handling of low energy high dose arsenic, phosphorus and boron implanted wafers |
abstract | PROBLEM TO BE SOLVED: To provide a method for preventing formation of harmful gas after an injection process. When implanted in a film disposed on a substrate, certain dopants may react when exposed to moisture to form toxic and / or flammable gases. By exposing the doped film in-situ to the oxygen-containing compound, the shallowly implanted dopant in the layer stack reacts to form a dopant oxide, thereby creating a potentially harmful and / or flammable gas. Reduce the formation of Alternatively, a capping layer can be formed in situ on the implanted membrane to reduce the potential generation of harmful and / or flammable gases. [Selection] Figure 3 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013164940-A1 |
priorityDate | 2006-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 126.